(China (Mainland))
Product Summary
The IRFP4227PBF is a HEXFET Power MOSFET. The device is specifically designed for Sustain; energy recovery and pass switch applications in plasma display panels. The IRFP4227PBF utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of the IRFP4227PBF are 175℃ operating junction temeprature and high repetitive peak current capability. These features combine to make this MOSFET IRFP4227PBF a highly efficient, robust and reliable device for PDP driving applications.
Parametrics
IRFP4227PBF absolute maximum ratings: (1)VGS, Gate-to-Source Voltage: ±30 V; (2)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 65 A; (3)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 46A; (4)IDM, Pulsed Drain Current: 260A; (5)IRP @ TC = 100℃, Repetitive Peak Current: 130A; (6)PD @TC = 25℃, Power Dissipation: 330 W; (7)PD @TC = 100℃, Power Dissipation: 190W; (8)Linear Derating Factor: 2.2 W/℃; (9)TJ, TSTG, Operating Junction and Storage Temperature Range: -40 to 175℃; (10)Soldering Temperature for 10 seconds: 300℃; (11)Mounting Torque, 6-32 or M3 Screw: 10N.
Features
IRFP4227PBF features: (1)Advanced Process Technology; (2)Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications; (3)Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications; (4)Low QG for Fast Response; (5)High Repetitive Peak Current Capability for Reliable Operation; (6)Short Fall & Rise Times for Fast Switching; (7)175℃ Operating Junction Temperature for Improved Ruggedness; (8)Repetitive Avalanche Capability for Robustness and Reliability.
Diagrams
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 IRFP4227PBF |
International Rectifier |
MOSFET MOSFT 200V 65A 25mOhm 70nC Qg |
Data Sheet |
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